2
RF Device Data
Freescale Semiconductor
MRF5P21180HR6
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics
(TC
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, VGS
= 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, VGS
= 0)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS
= 5 Vdc, VDS
= 0 Vdc)
IGSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(1)
(VDS
= 10 Vdc, ID
= 200
μAdc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(3)
(VDS
= 28 Vdc, ID
= 1600 mAdc)
VGS(Q)
—
3.6
—
Vdc
Drain--Source On--Voltage
(1)
(VGS
= 10 Vdc, ID
= 2 Adc)
VDS(on)
—
0.26
0.3
Vdc
Forward Transconductance
(1)
(VDS
= 10 Vdc, ID
= 2 Adc)
gfs
—
5
—
S
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, VGS
= 0 Vdc)
Crss
—
1.7
—
pF
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) VDD
= 28 Vdc, IDQ
= 1600 mA, Pout
= 38 W Avg., f = 2157.5 MHz,
2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5 MHz Offset. IM3
measured in 3.84 MHz Bandwidth @
±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12.5
14
—
dB
Drain Efficiency
ηD
23
25.5
—
%
Intermodulation Distortion
IM3
—
--37.5
--35
dBc
Adjacent Channel Power Ratio
ACPR
—
--41
--38
dBc
Input Return Loss
IRL
—
--14
--9
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push--pull configuration.
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